proc nlin, statistical analysis software version 9.2 Search Results


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Thorlabs wavelength
(a) Illustration of the realized suspended GOS waveguide structure with key dimensions indicated. (b) Top-view SEM image showing a suspended Ge waveguide, which is mechanically supported by an underlying trapezoidal Si anchor. The dimensions of the trapezoidal Si anchor are marked. (c) Simulation of the waveguide propagation loss due to substrate leakage for four different suspension gaps d (top), and of the effective index n eff and external confinement factor Γ of the fundamental TE 00 mode for d = 10 μm (bottom) across the <t>wavelength</t> range of interest (2–14 μm). The insets illustrate the orientation of d and a cross-sectional mode simulation of the TE 00 electric field magnitude at the operating wavelength of 9.2 μm.
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(a) Illustration of the realized suspended GOS waveguide structure with key dimensions indicated. (b) Top-view SEM image showing a suspended Ge waveguide, which is mechanically supported by an underlying trapezoidal Si anchor. The dimensions of the trapezoidal Si anchor are marked. (c) Simulation of the waveguide propagation loss due to substrate leakage for four different suspension gaps d (top), and of the effective index n eff and external confinement factor Γ of the fundamental TE 00 mode for d = 10 μm (bottom) across the <t>wavelength</t> range of interest (2–14 μm). The insets illustrate the orientation of d and a cross-sectional mode simulation of the TE 00 electric field magnitude at the operating wavelength of 9.2 μm.
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AUTODOCK GmbH docking scores in autodock vina
(a) Illustration of the realized suspended GOS waveguide structure with key dimensions indicated. (b) Top-view SEM image showing a suspended Ge waveguide, which is mechanically supported by an underlying trapezoidal Si anchor. The dimensions of the trapezoidal Si anchor are marked. (c) Simulation of the waveguide propagation loss due to substrate leakage for four different suspension gaps d (top), and of the effective index n eff and external confinement factor Γ of the fundamental TE 00 mode for d = 10 μm (bottom) across the <t>wavelength</t> range of interest (2–14 μm). The insets illustrate the orientation of d and a cross-sectional mode simulation of the TE 00 electric field magnitude at the operating wavelength of 9.2 μm.
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ChemAxon LLC calculated (chemaxon value)
(a) Illustration of the realized suspended GOS waveguide structure with key dimensions indicated. (b) Top-view SEM image showing a suspended Ge waveguide, which is mechanically supported by an underlying trapezoidal Si anchor. The dimensions of the trapezoidal Si anchor are marked. (c) Simulation of the waveguide propagation loss due to substrate leakage for four different suspension gaps d (top), and of the effective index n eff and external confinement factor Γ of the fundamental TE 00 mode for d = 10 μm (bottom) across the <t>wavelength</t> range of interest (2–14 μm). The insets illustrate the orientation of d and a cross-sectional mode simulation of the TE 00 electric field magnitude at the operating wavelength of 9.2 μm.
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htb-92  (atcc)
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atcc htb-92
(a) Illustration of the realized suspended GOS waveguide structure with key dimensions indicated. (b) Top-view SEM image showing a suspended Ge waveguide, which is mechanically supported by an underlying trapezoidal Si anchor. The dimensions of the trapezoidal Si anchor are marked. (c) Simulation of the waveguide propagation loss due to substrate leakage for four different suspension gaps d (top), and of the effective index n eff and external confinement factor Γ of the fundamental TE 00 mode for d = 10 μm (bottom) across the <t>wavelength</t> range of interest (2–14 μm). The insets illustrate the orientation of d and a cross-sectional mode simulation of the TE 00 electric field magnitude at the operating wavelength of 9.2 μm.
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(a) Illustration of the realized suspended GOS waveguide structure with key dimensions indicated. (b) Top-view SEM image showing a suspended Ge waveguide, which is mechanically supported by an underlying trapezoidal Si anchor. The dimensions of the trapezoidal Si anchor are marked. (c) Simulation of the waveguide propagation loss due to substrate leakage for four different suspension gaps d (top), and of the effective index n eff and external confinement factor Γ of the fundamental TE 00 mode for d = 10 μm (bottom) across the <t>wavelength</t> range of interest (2–14 μm). The insets illustrate the orientation of d and a cross-sectional mode simulation of the TE 00 electric field magnitude at the operating wavelength of 9.2 μm.
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SETARAM Inc setaram tag 92
(a) Illustration of the realized suspended GOS waveguide structure with key dimensions indicated. (b) Top-view SEM image showing a suspended Ge waveguide, which is mechanically supported by an underlying trapezoidal Si anchor. The dimensions of the trapezoidal Si anchor are marked. (c) Simulation of the waveguide propagation loss due to substrate leakage for four different suspension gaps d (top), and of the effective index n eff and external confinement factor Γ of the fundamental TE 00 mode for d = 10 μm (bottom) across the <t>wavelength</t> range of interest (2–14 μm). The insets illustrate the orientation of d and a cross-sectional mode simulation of the TE 00 electric field magnitude at the operating wavelength of 9.2 μm.
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Image Search Results


(a) Illustration of the realized suspended GOS waveguide structure with key dimensions indicated. (b) Top-view SEM image showing a suspended Ge waveguide, which is mechanically supported by an underlying trapezoidal Si anchor. The dimensions of the trapezoidal Si anchor are marked. (c) Simulation of the waveguide propagation loss due to substrate leakage for four different suspension gaps d (top), and of the effective index n eff and external confinement factor Γ of the fundamental TE 00 mode for d = 10 μm (bottom) across the wavelength range of interest (2–14 μm). The insets illustrate the orientation of d and a cross-sectional mode simulation of the TE 00 electric field magnitude at the operating wavelength of 9.2 μm.

Journal: ACS Photonics

Article Title: Suspended Germanium-on-Silicon Photonic Integrated Circuits Operating in the Long-Wave Infrared and Their Use for Ethanol Sensing

doi: 10.1021/acsphotonics.6c00154

Figure Lengend Snippet: (a) Illustration of the realized suspended GOS waveguide structure with key dimensions indicated. (b) Top-view SEM image showing a suspended Ge waveguide, which is mechanically supported by an underlying trapezoidal Si anchor. The dimensions of the trapezoidal Si anchor are marked. (c) Simulation of the waveguide propagation loss due to substrate leakage for four different suspension gaps d (top), and of the effective index n eff and external confinement factor Γ of the fundamental TE 00 mode for d = 10 μm (bottom) across the wavelength range of interest (2–14 μm). The insets illustrate the orientation of d and a cross-sectional mode simulation of the TE 00 electric field magnitude at the operating wavelength of 9.2 μm.

Article Snippet: A linearly polarized laser beam at a 9.2 μm wavelength from a quantum cascade laser (QD9500CM1, Thorlabs, USA) was focused onto the waveguide edge coupler.

Techniques: Suspension